Dr Nives Štrkalij

Dr Nives Strkalj completed her PhD studies at ETH Zurich in February 2021 with a focus on studying polar order in thin films during synthesis. She joined the Device Materials Group in March 2021 as a fellow of the Swiss National Science foundation to explore novel approaches to polarization-controlled memory devices. She is continuing her career as an Associate Principal Investigator at the Institute of Physics, Zagreb. She is on a mission to understand and overturn size effects in ferroelectric oxide heterostructures. She is passionate about nanoscale ferroelectricity and bringing oxide heterostructure into the mainstream of the electronics industry.

Talks:

1. Polarization-controlled Schottky-to-Ohmic transition in heterostructures hosting semiconducting ferroelectric Y-doped HfO2 films, Electronic Materials and Applications (EMA), Orlando, Florida, USA, invited talk (2023)

2. Interfaces as means to controlling size effects in nanoscale ferroelectrics, Seminar at London Centre for Energy Engineering, LSBU, UK, invited talk (2023)

3. Ferroelectricity in epitaxially strained thin films of a binary oxide, Joint ISAF-ISIF-PFM, Cleveland, USA, Virtual participation (2023)