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Data-centric technologies are rapidly growing with new applications emerging, raising the needs for electronic devices withh lower power consumption, with durable embedded memories (volatile and non-volatile), operating at high computational speed. One of the most promising solution to this is neuromorphic computing, which emulates the working principles that the human brain uses for information processing, and it holds the key to flexible computation and efficient machine learning applications.

The vision of EROS is to nanoengineer and explore oxide thin films to achieve memristive Efficient, Robust Oxide Switching. The main aim is investigating novel materials characterised by anisotropic oxygen defect mobility along defined planes. Such systems can provide fast ionic conduction and cation exchange and are thus promising for reduced power consumption and higher processing speed. Thin films of high-quality oriented structures will be developed through pulsed laser deposition techniques and their composition will be monitored to enable in-depth understanding of ionic conduction and resulting resistive switching (RS). The control of cation motion along predefined directions or crystallographic paths will permit precise regulation of RS to make it uniform and robust. This will then be utilised for volatile and non-volatile memorisation for neuromorphic computing applications. The main aim is the elimination of RS stochasticity which is common in many emerging RS technologies and which constitutes one of the major bottlenecks toward reliable cyclability and reliability in memristive systems. Nanodevices developd in the EROS project can open the door to electronic properties with unprecedented scaling to fulfil industry requirements for large-scale manufacture.

The project is funded by Prof. Driscoll's Advanced ERC and the core team consists of Prof. Driscoll herself and Dr. Barbara Salonikidou. For an overview over all our memory-related projects see here and for some of our in-house capabilities see here.