Biography
Dr Nives Strkalj completed her PhD studies at ETH Zurich in February 2021 with a focus on studying polar order in thin films during synthesis. She joined the Device Materials Group in March 2021 as a fellow of the Swiss National Science foundation to explore novel approaches to polarization-controlled memory devices. She is continuing her career as an Associate Principal Investigator at the Institute of Physics, Zagreb. She is on a mission to understand and overturn size effects in ferroelectric oxide heterostructures. She is passionate about nanoscale ferroelectricity and bringing oxide heterostructure into the mainstream of the electronics industry.
Publications
Strkalj, N.*, Gattinoni, C., Vogel*, A., Campanini, M., Härdi, R., Rossi, A., Rossell, M. D., Spaldin, N. A., Fiebig, M. & Trassin, M. In-situ monitoring of interface proximity effects in ultrathin ferroelectric. Nat Commun. 5815 (2020).
Publications acknowledging EROS:
- H. Dou, N. Strkalj, Y. Zhang, J. L. MacManus-Driscoll, Q. Jia, and H. Wang, Optical dielectric properties of HfO2-based films, J. Vac. Sci. Technol. A 40, 033412 (2022)
- M. L. Müller*, M. T. Becker*, N. Strkalj, and J. L. MacManus-Driscoll, Schottky-to-Ohmic switching in ferroelectric memristors based on semiconducting Hf 0.93 Y 0.07 O 2 thin films, Appl. Phys. Lett. 121, 093501 (2022)
- A. Jan, T. Rembert, J. Symonowicz, N. Strkalj, T. Moon, Y. S. Lee, H. Bae, H. J. Lee, D.‐H. Choe, J. Heo, J. MacManus‐Driscoll, B. Monserrat, and G. Di Martino, In Operando Optical Tracking of Oxygen Vacancy Migration and Phase Change in few Nanometers Ferroelectric HZO Memories, Adv. Funct. Mater. 2214970 (2023)
- M. T. Becker, P. Oldroyd, N. Strkalj, M. L. Müller, G. G. Malliaras, and J. L. MacManus-Driscoll, Ferroelectricity and resistive switching in BaTiO3 thin films with liquid electrolyte top contact for bioelectronic devices, Appl. Phys. Lett. 122, 173701 (2023)
- A. Ashoka, S. Nagane, N. Strkalj, J. L. MacManus-Driscoll, J. Sung, B. Roose, S. D. Stranks, S. Feldmann, and A. Rao, Local Symmetry Breaking Drives Picosecond Spin Domain Formation in Polycrystalline Halide Perovskite Films, Nat. Mater. 22, 977 (2023)
- A. Jan, N. Strkalj, X.-T. Nguyen, J. L. MacManus-Driscoll, and G. Di Martino, Comprehensive study of Raman optical response of typical substrates for thin-film growth under 633 nm and 785 nm laser excitation, Opt. Express 31, 33914 (2023)
- A. Frechilla, M. Napari, N. Strkalj, E. Barriuso, K. Niang, M. Hellenbrand, P. Strichovanec, F. M. Simanjuntak, G. Antorrena, A. Flewitt, C. Magén, G. F. de la Fuente, J. L. MacManus-Driscoll, L. A. Angurel, and J. Á. Pardo, Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing, Appl. Mater. Today 36, 102033 (2024)
Other Professional Activities
Talks:
1. Polarization-controlled Schottky-to-Ohmic transition in heterostructures hosting semiconducting ferroelectric Y-doped HfO2 films, Electronic Materials and Applications (EMA), Orlando, Florida, USA, invited talk (2023)
2. Interfaces as means to controlling size effects in nanoscale ferroelectrics, Seminar at London Centre for Energy Engineering, LSBU, UK, invited talk (2023)
3. Ferroelectricity in epitaxially strained thin films of a binary oxide, Joint ISAF-ISIF-PFM, Cleveland, USA, Virtual participation (2023)
