PhD Students - General Information

Information for perspective PhD students

New oxide interface electronics

In the last few years, there have been very exciting reports about the new functional properties which can be achieve at the interface between oxide films, e.g. there is the possibility to achieve new kinds of fast, energy efficient semiconductor processors and even possibly room temperature superconductors. This project involves exploring such phenomena. It will involve growth of ultrathin, single crystal thin films using a world leading, state-of-the-art advanced pulsed laser deposition system with in-situ diagnostic tools (XPS, UPS), followed by their measurement using a variety of means including electrical measurements, synchroton studies, and atomic force microscopy (scanning probe) techniques. For further information contact Prof J Driscoll.

Oxide memristors for next generation non-volatile memory in computing

Non-volatile memory (NVM) is critical for all aspects of modern computing, as well in future generation digital technologies like the Internet of Things (IoT) and neuromorphic computing—technologies that will penetrate into many realms of society. Among NVM technologies, resistive random access memory (RRAM) based on metal oxide (MO) films as the resistive switching (RS) layers has the potential of high-speed, low operation voltage, low power consumption, and good endurance that enables the highest performance at the lowest cost possible. There are a number of challenges which need to be addressed with these materials, relating to their nanostructuring and composition. We have solved these problems in a model system and now wish to take this forward to more simple systems. This project will develop such systems. We will collaborate with a number of groups on testing and implementation of industry prototypes.For further information contact Prof J Driscoll.